| 1N3213 |
Newark |
INTERNATIONAL RECTIFIER
|
Power Fast Recovery
|
Fast Recovery Power Rectifier; Forward Voltage:1.5V; Forward Current:15A; Repetitive Reverse Voltage Max, Vrrm:500V; Package/Case:DO-203AB (DO-5); Current Rating:15A; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| 1N2128A |
Newark |
INTERNATIONAL RECTIFIER
|
Power Standard Recovery
|
Standard Recovery Power Rectifier; Forward Voltage:1.3V; Forward Current:60A; Repetitive Reverse Voltage Max, Vrrm:50V; Package/Case:DO-203AB (DO-5); Current Rating:60A; Mounting Type:Through Hole RoHS Compliant: Yes |
| SKD 160/12. |
Newark |
SEMIKRON
|
Bridge Rectifier Modules
|
Bridge Rectifier Module; Forward Voltage:1.65V; Forward Current:300A; Repetitive Reverse Voltage Max, Vrrm:1200V; Package/Case:G-37; Leaded Process Compatible:No; Current Rating:160A; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| MC74HC157ADR2G |
Newark |
ON SEMICONDUCTOR
|
Power Standard Recovery
|
Standard Recovery Power Rectifier; Package/Case:16-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| HFA16TA60CS |
Newark |
INTERNATIONAL RECTIFIER
|
Power Fast Recovery
|
Fast Recovery Power Rectifier; Forward Voltage:1.7V; Forward Current:16A; Repetitive Reverse Voltage Max, Vrrm:600V; Package/Case:D2-PAK; Leaded Process Compatible:No; Current Rating:8A; Leakage Current:5uA RoHS Compliant: No |
| IRF7807A |
Newark |
INTERNATIONAL RECTIFIER
|
MOSFET
|
MOSFET; Transistor Polarity:N Channel; Power Dissipation:2.5W; Drain-Source Breakdown Voltage:30V; Continuous Drain Current, Id:6.6A; Package/Case:8-SOIC; Leaded Process Compatible:No; Drain Source On Resistance @ 4.5V:25mOhm RoHS Compliant: No |
| IRFP15N60L |
Newark |
INTERNATIONAL RECTIFIER
|
MOSFET
|
MOSFET; Transistor Polarity:N Channel; Power Dissipation:280W; Drain-Source Breakdown Voltage:600V; Package/Case:TO-247AC; Leaded Process Compatible:No; Drain Source On Resistance @ 10V:460mOhm; Gate-To-Drain Charge:30.7C RoHS Compliant: No |
| IRF7822PBF |
Newark |
INTERNATIONAL RECTIFIER
|
MOSFET
|
MOSFET; Transistor Polarity:N Channel; Power Dissipation:3.1W; Drain-Source Breakdown Voltage:30V; Continuous Drain Current, Id:18A; Package/Case:8-SOIC; Leaded Process Compatible:Yes; Drain Source On Resistance @ 4.5V:6.5mOhm RoHS Compliant: Yes |
| T40HFL20S05 |
Newark |
INTERNATIONAL RECTIFIER
|
Standard Recovery Rectifier Modules
|
Standard Recovery Rectifier Module; Forward Voltage:1.6V; Forward Current:40A; Repetitive Reverse Voltage Max, Vrrm:200V; Package/Case:T-Module; Current Rating:40A; Peak Reflow Compatible (260 C):Yes; Pin Configuration:Single RoHS Compliant: Yes |
| IRL3103LPBF |
Newark |
INTERNATIONAL RECTIFIER
|
MOSFET
|
MOSFET; Transistor Polarity:N Channel; Power Dissipation:110W; Drain-Source Breakdown Voltage:30V; Continuous Drain Current, Id:64A; Package/Case:TO-262; Leaded Process Compatible:Yes; Drain Source On Resistance @ 10V:12mOhm RoHS Compliant: Yes |
| IRS2111PBF |
Newark |
INTERNATIONAL RECTIFIER
|
Drivers, MOSFET
|
MOSFET Driver IC; Package/Case:8-PDIP; Leaded Process Compatible:Yes; Supply Voltage Max.:20V; Driver Type:Half-Bridge; Offset Voltage:600V; Output Voltage Max:20V; Output Voltage Min:10V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes |
| SKMD 40F04 |
Newark |
SEMIKRON
|
Power Fast Recovery
|
Fast Recovery Power Rectifier; Package/Case:TO-244AA; Leaded Process Compatible:Yes; Current Rating:36A; Mounting Type:Through Hole RoHS Compliant: Yes |
| 1N5062GP/1 |
Newark |
VISHAY GENERAL SEMICONDUCTOR
|
Power Standard Recovery
|
Standard Recovery Power Rectifier; Forward Current:1A; Repetitive Reverse Voltage Max, Vrrm:800V; Package/Case:DO-15; Leaded Process Compatible:No; Current Rating:1A; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| IRFU9120NPBF |
Newark |
INTERNATIONAL RECTIFIER
|
MOSFET
|
MOSFET; Transistor Polarity:P Channel; Power Dissipation:39W; Drain-Source Breakdown Voltage:-100V; Continuous Drain Current, Id:-6.5A; Package/Case:I-Pak; Leaded Process Compatible:Yes; Drain Source On Resistance @ 10V:480mOhm RoHS Compliant: Yes |
| IRFS23N20D |
Newark |
INTERNATIONAL RECTIFIER
|
MOSFET
|
MOSFET; Transistor Polarity:N Channel; Power Dissipation:170W; Drain-Source Breakdown Voltage:200V; Continuous Drain Current, Id:24A; Package/Case:D2-Pak; Leaded Process Compatible:No; Drain Source On Resistance @ 10V:100mOhm RoHS Compliant: No |
| 8EWF12STRPBF |
Newark |
INTERNATIONAL RECTIFIER
|
Power Fast Recovery
|
Fast Recovery Power Rectifier; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| IRFR3412TRPBF |
Newark |
INTERNATIONAL RECTIFIER
|
MOSFET
|
MOSFET; Transistor Polarity:N Channel; Power Dissipation:140W; Drain-Source Breakdown Voltage:100V; Continuous Drain Current, Id:48A; Package/Case:D-Pak; Continuous Drain Current - 100 Deg C:34A; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 6FL20S02 |
Newark |
INTERNATIONAL RECTIFIER
|
Power Fast Recovery
|
Fast Recovery Power Rectifier; Forward Voltage:1.4V; Forward Current:6A; Repetitive Reverse Voltage Max, Vrrm:200V; Package/Case:DO-203AA (DO-4); Current Rating:6A; Mounting Type:Through Hole RoHS Compliant: Yes |
| IP2002 |
Newark |
INTERNATIONAL RECTIFIER
|
Voltage Regulators & DC-DC Converters, Switching
|
Power Supply IC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| 1N5405-E3/1 |
Newark |
VISHAY GENERAL SEMICONDUCTOR
|
Power Standard Recovery
|
Standard Recovery Power Rectifier; Forward Current:3A; Repetitive Reverse Voltage Max, Vrrm:500V; Package/Case:DO-201AD; Leaded Process Compatible:Yes; Current Rating:3A; Mounting Type:Through Hole RoHS Compliant: Yes |
